THEORETICAL STUDY OF SPECTRAL RESPONSES OF HETEROJONCTIONS BASED ON CuInSe2 and CuInS2

Authors

  • elou keita authors
  • Dr B. ndiaye Laboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
  • Dr M. Dia Laboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
  • Dr Y. Tabar Laboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
  • Dr C. Sene Laboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
  • Dr B. Mbow Laboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal

Keywords:

Solar cells, Heterojunctions, CuInSe2 and CuInS2, Spectral Responses, base and substrate effects

Abstract

In this work we study the spectral responses of thin films solar cells of heterojunctions based on CuInSe2 and CuInS2. Four-layer structures are studied according to the n+n/pp+ model. First we consider the structure  ZnO(n+)/CdS(n)/CuInS2(p)/CuInSe2(p+) where CuInS2 represent the base and CuInSe2 the substrate in this model. Secondly we consider the structure ZnO(n+)/CdS(n)/CuInSe2(p)/ CuInS2(p+), for this model CuInSe2 represent the base and CuInS2 the substrate. ZnO and CdS are used as window layers in each structure. Using the continuity equation that governs transport of carriers in semiconductor material, models for calculating spectral responses are proposed for heterojunctions type n+n/pp+ based on CuInSe2 and CuInS2. For each structure we have presented the energy band diagram based on the Anderson model [1] and determined the expression of the photocurrent. The theoretical results obtained allow to compare the performances of these two models by optimizing the different parameters of each structure (base thickness, diffusion length, recombination velocity at the interface, etc.) in order to improve the overall efficiency of the collection of carriers.

References

R. L. Anderson, ‘’ Germanium- gallium arsenide heterojunctions’’, IBM J.Res.Dev.4, 283, 1960

E.M. Keita, B. Mbow, M.S. Mane, M.L. Sow, C. Sow, C. Sene ‘’Theoretical Study of Spectral Responses of Homojonctions Based on CuInSe 2 ’’ Journal of Materials Science & Surface Engineering, Vol. 4 (4), 2016, pp392-399

E.M. Keita *, B. Mbow, M.L. Sow , C. Sow , M. Thiam , C. Sene, ‘’ Theoretical Comparative Study Of Internal Quantum Efficiency Of Thin Films Solar Cells Based On CuInSe 2 : p + /p/n/n + , p/n/n + , p + /p/n and p/n Models’ ’ INTERNATIONAL JOURNAL OF ENGINEERING SCIENCES & RESEARCH TECHNOLOGY, 5(9): September, 2016, 344-359

Subba Ramaiah Kodigala, ‘’Cu(In 1-x Ga x )se 2 based thin solar cells’’, 2010, Volume 35, Academic Press, ELSEVIER.Inc.

Hisashi Yoshikawa, Sadao Adachi, ‘’Optical Constants of ZnO’’ Jpn. J.Appl. Phys. Vol 36 (1997) pp. 6237-6243

H.F. Wolf, Semiconductors, Wiley Interscience, New York, NY, 1971.

M. Savelli and J. Bougnot, Problems of the CuZS/CdS Cell, in “Solar Energy, Solid State Physics Aspects" (B. O. Seraphin, ed.). Vol. 31. Topics in Applied Physics, p. 213. Springer-Verlag, Berlin and New York, 1979.

D.L. Feucht, ‘’ Heterojunctions in photovoltaic devices’’ J. Vac. Sci. Technol. 14 (1977) 57.

O. Lupan, T. Pauporte, L. Chow, B. Viana, F. Pelle, L.K. Ono, et al.,’’ Effects of annealing on properties of ZnO thin films prepared by electrochemical deposition in chloride medium ’’ Appl. Surf. Sci. 256 (2010) 1895.

Daniel Lincot et Jean-François Guillemoles, ‘’ Cellules solaires en couches minces à base de CuInSe 2 ’’, http://www.refletsdelaphysique.fr/articles/refdp/pdf/2007/03/refdp20075p16.pdf

J.L. Shay, J.H. Wernick: “Ternary chalcopyrite semiconductors: growth, electronic properties, and applications”, Chapter 2: “The chalcopyrite structure and crystal growth”, pp. 3-78, Pergamon Press, Oxford, New York, Toronto, Sydney, Paris, Braunschweig (1975)

T. Loher, W. Jaegermann, C. Pettenkofer, ‘’ Formation and electronic properties of the CdS/CuInSe 2 (011) heterointerface studied by synchrotron induced photoemission’’, J. Appl. Phys. 77 (1995) 731.

H. Hahn, G. Frank, W. Klinger, A.D. Meyer, G. Strorger, ‘’ Über einige ternäre Chalkogenide mit Chalcopyritestruktur’’, Z. Anorg. Aug. Chem. 271 (1953) 153.

M. Robbins, V.G. Lambrecht Jr., ‘’ Preparation and some properties of materials in systems of the type M I M III S 2 / M I M III Se2 where M I = Cu, Ag and M III = Al, Ga, In’’, Mater. Res. Bull. 8 (1973) 703.

I.V. Bodnar, B.V. Korzun, A.I. Lukomski, ‘’ Composition Dependence of the Band Gap of CuInS 2x Se 2(1?x) ’’, Phys. Stat. Solidi (B) 105 (1981) K143.

S.J. Fonash, Solar Cell device Physics, Academic Press, New York, 1981.

El Hadji Mamadou KEITA, Doctoral Thesis, ‘’ Etude théorique de réponses spectrales de cellules solaires à base de CuInSe 2 : Modèles à 2 couches (p/n et n/p), à 3 couches (p/n/n + , p + /p/n, n/p/p + et n + /n/p) et à 4 couches (p + /p/n/n + et n + /n/p/p + ) ’’, Université Cheikh Anta DIOP de Dakar, Sénégal (2017). P.47

B. Mbow, A. Mezerreg, N. Rezzoug, and C.Llinares, ‘’Calculated and Measured Spectral Responses in Near-Infrared of III-V Photodetectors Based on Ga, In, and Sb’’, phys. Stat. Sol. (a) 141, 511 (1994).

H. J. Hovel and J. M. Woodall,’’ Ga 1-x Al x As - GaAs P-P-N Heterojunction Solar Cells’’, J. Electrochem. Soc. 120, 1246 (1973).

H. J. Hovel and J. M. Woodall, 10th IEEE Photovoltaic Specialists Conf., Palo Alto (Calif.) 1973 (p.25).

H. J. Hovel, ‘’ Semiconductors and Semimetals: Solar Cells’’, 11, Academic Press, New York, 127 (1975).

Downloads

Published

2020-08-19

How to Cite

keita, elou, ndiaye, B. ., Dia, M. ., Tabar, Y., Sene, C., & Mbow, B. (2020). THEORETICAL STUDY OF SPECTRAL RESPONSES OF HETEROJONCTIONS BASED ON CuInSe2 and CuInS2. OAJ Materials and Devices, 5(1). Retrieved from http://caip.co-ac.com/index.php/materialsanddevices/article/view/120

Issue

Vol. 5 No. 1 (2020)

Section

Articles

License

Copyright (c) 2020 elou keita, Dr B. ndiaye, Dr M. Dia, Dr Y. Tabar, Dr C. Sene, Dr B. Mbow

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Authors who publish with this journal agree to the following terms:

    1. Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License ( Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License) that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
    2. To the extent transferable, copyright in and to the undersigned article is hereby assigned to Collaborating Academics and Open Access Journal Materials and Devices (ISSN: 2495-3911) for publication in the website of the journal and as part of a book (eventually a special volume) that could be produced in a printed and/or an electronic form.
    3. Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
    4. Figures, tables, and other information present in articles published in the OAJ Materials and Devices may be reused without permission, provided the citation of original article is made in figure's or table's caption.