LEAD-FREE BNT PIEZOELECTRIC THIN FILMS BY SOL-GEL METHOD

Keywords:

PIEZOELECTRIC, LEAD-FREE, THIN FILMS, SOL-GEL, OXIDES, BNT, Bi0.5Na0.5TiO3

Abstract

The objective of this work is to synthesize lead-free piezoelectric thin films by the Sol-Gel method:
bismuth sodium titanate (Bi0.5Na0.5TiO3 or BNT). BNT films were annealed with the rapid thermal process (RTP).
The film treated at 700°C is dense and well crystallized in the perovskite phase. The first results of electrical
characterizations showed promising dielectric, ferroelectric and piezoelectric performance. At 12 kHz, the
dielectric constant and losses are 430 and 0.07, respectively. Ferroelectric hysteresis measurements indicated a
remanent polarization of 10μC/cm2, associated with a coercive field of 70 kV/cm. The piezoelectric properties of
BNT films were studied with a laser Doppler interferometer: a piezoelectric coefficient (d33effmax) of 42 pm/V was
measured.

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MatandDev-Vol1(1)

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Published

2016-12-18

How to Cite

LEAD-FREE BNT PIEZOELECTRIC THIN FILMS BY SOL-GEL METHOD. (2016). OAJ Materials and Devices, 1(1). Retrieved from http://caip.co-ac.com/index.php/materialsanddevices/article/view/13

Issue

Vol. 1 No. 1 (2016)

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Articles

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