LEAD-FREE BNT PIEZOELECTRIC THIN FILMS BY SOL-GEL METHOD

Keywords:

PIEZOELECTRIC, LEAD-FREE, THIN FILMS, SOL-GEL, OXIDES, BNT, Bi0.5Na0.5TiO3

Abstract

The objective of this work is to synthesize lead-free piezoelectric thin films by the Sol-Gel method:
bismuth sodium titanate (Bi0.5Na0.5TiO3 or BNT). BNT films were annealed with the rapid thermal process (RTP).
The film treated at 700°C is dense and well crystallized in the perovskite phase. The first results of electrical
characterizations showed promising dielectric, ferroelectric and piezoelectric performance. At 12 kHz, the
dielectric constant and losses are 430 and 0.07, respectively. Ferroelectric hysteresis measurements indicated a
remanent polarization of 10μC/cm2, associated with a coercive field of 70 kV/cm. The piezoelectric properties of
BNT films were studied with a laser Doppler interferometer: a piezoelectric coefficient (d33effmax) of 42 pm/V was
measured.

References

T. Yamamoto, Japanese Journal of Applied Physics, vol 35, p 5104 (1996)

Official Journal of the European Union, vol 46, p 19 (2003)

T. Takenaka, H. Nagata, Y. Hiruma, Japanese Journal of Applied Physics, vol 47, p 3787 (2008)

A. Herabut, A. Safari, Journal of the American Ceramic Society, vol 80, p 2954 (1997)

Z Zhou, J Xue, W Li, J Wang, H Zhu, J Miao, Applied Physics Letter, vol.85, p 804 (2004)

R. Herdier, D. Jenkins, E. Dogheche, D. Remiens, M. Sulc, Review of Scientific Instruments, vol. 77, (2006)

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Published

2016-12-18

How to Cite

LEAD-FREE BNT PIEZOELECTRIC THIN FILMS BY SOL-GEL METHOD. (2016). OAJ Materials and Devices, 1(1). Retrieved from http://caip.co-ac.com/index.php/materialsanddevices/article/view/13

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