Chap. 26 - Resistance Switching Effect in Octahedral framework oxide


  • Yaovi GAGOU LPMC University Picardie Jules Verne
  • B. Allouche Université de Picardie Jules Verne, LPMC, 33 rue Saint-Leu, F-80039 Amiens, France
  • P. Saint-Gregoire C.A.L., 14 Av Frédéric Mistral, 34110 Frontignan, France
  • M. El Marssi Université de Picardie Jules Verne, LPMC, 33 rue Saint-Leu, F-80039 Amiens, France


perovskites, resistance switching, ReRAM, tetragonal tungsten bronze, GdK2Nb5O15, GKN, memory device, thin film, pulsed laser deposition, PLD


Resistive Random-Access Memories (ReRAM) are an alternative way to create
new memory devices. This is physically possible due to the existence in the material, of
two resistive states clearly discreditable, as a function of voltage value and polarity first
parameter under control to pass from one state to another one. However, the mechanism
of the resistance switching is not simple and is under debate. We present in the present
chapter all the factors entering in the switching process in tetragonal tungsten bronze
(TTB) type structure oxide thin films deposited by PLD technique onto MgO or STO
substrates. Results show that GdK2Nb5O15 (GKN) thin films deposited on MgO and STO
substrates are resistively switchable. It was found that the nature of the substrate strongly
affects the resistance ratio: GKN on SRO/LSCO/MgO showed a large hysteresis
compared to GKN on SRO/STO. Substrate effect and oxygen vacancy on resistance
switching in GKN thin film were studied in the same experimental conditions. The study of
resistance switching in the GKN/MgO and GKN/STO thin films has confirmed that for low
voltages, below the threshold value of 1.3 V, the electric transport is dominated by the
formation of a Schottky type barrier, which allows a minimum leakage current. Resistance
switching in GKN is attributed to the oxygen vacancies migration which can be controlled
by the substrate or the frequency sweep.


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How to Cite

GAGOU, Y., Allouche, B., Saint-Gregoire, P., & El Marssi, M. (2022). Chap. 26 - Resistance Switching Effect in Octahedral framework oxide. OAJ Materials and Devices, 5(2). Retrieved from

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