Real Solar Cell and Determination Methods of Electrical Parameters

Authors

  • El Hadji Mamadou Keita authors
  • F. Mbaye Laboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
  • M. Dia Laboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
  • C. Sow Laboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
  • C. Sene Laboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal
  • B. Mbow Laboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal

Keywords:

Real Solar Cell, Electrical Parameters, Conversion Efficiency, photovoltaics, perovskite solar cell

Abstract

In this work, we develop methods to determine the characteristic electrical parameters of a photovoltaic cell such as the photocurrent density (Jph),  the saturation current density (J0), the short-circuit current density (Jsc), the open-circuit voltage (Voc), the maximum power density point (Jm , Vm), the fill factor (FF) and the electrical conversion efficiency (etaC) according to the irradiance spectrum. The real solar cell model is considered for the determination of these various parameters. This model takes into account the effect of shunt and series resistances (parasitic resistances).  Notions of semiconductor physics, continuity equation of charge carriers combined to optoelectronic and geometrical properties of the materials, numerical resolution method to solve implicit equations based on characteristic equation of a photodiode, are notions mainly exploited to determine electrical parameters of the real solar cell. The results are applied to the heterostructures ZnO(n+)/CdS(n)/CuInS2(p)/ CuInSe2(p+) named CIS and ZnO(n+)/CdS(n)/CuInSe2(p)/CuInS2(p+) named CISE to evaluate their performances according to the considered parameters. The results obtained for each structure, photocurrent density ~ 17 mA.cm-2 (CIS) and 31 mA.cm-2 (CISE), short-circuit current density ~ 16.79 - 17 mA.cm-2 (CIS) and 30.62 - 31 mA.cm-2 (CISE), open-circuit voltage ~  0.76 V (CIS) and 0.52 V (CISE), fill factor ~ 0.648 - 0.745 (CIS) and 0.545 - 0.677 (CISE), maximum power density ~ 8.28 - 9.69 mW.cm-2 (CIS) and 8.72 - 11.02 mW.cm-2 (CISE), saturation current ~ 4.117×10-8 mA.cm-2 (CIS) and 1.169×10-3 mA.cm-2 (CISE), are in the same magnitude order as the values published in the literature. We obtain under AM 1.5 solar spectrum and taken into account the parasitic resistances, a theoretical conversion efficiency ranging from 9.93% to 11.62% for the model CIS and from 10.46% to 13.22% for the model CISE. Thus, these results allow to validate the various models established to model the phenomena studied.

References

S. M. Sze, ‘’Physics of Semiconductor Devices’’, Wiley (1981), 51

El Hadji Mamadou Keita, Abdoul Aziz Correa, Issa Faye, Chamsdine Sow, Cheikh Sene, Babacar Mbow. Short-Circuit

Photocurrent Density Determination of Chalcopyrite Solar Cells and Study of Basic Parameters Under AM0, AM1, AM1.5

Spectra. Science Journal of Energy Engineering. Vol. 9, No. 4, 2021, pp. 79-89. doi: 10.11648/j.sjee.20210904.15

El Hadji Mamadou Keita, Fallou Mbaye, Bachirou Ndiaye, Chamsdine Sow, Cheikh Sene, Babacar Mbow. Optimizing

Structures Based on Chalcopyrite Materials for Photovoltaic Applications. American Journal of Energy Engineering. Vol.

, No. 3, 2022, pp. 53-67. doi: 10.11648/j.ajee.20221003.11

E. M. Keita, B. Ndiaye, M. Dia, Y. Tabar, C. Sene, B. Mbow, “Theoretical Study of Spectral Responses of Heterojunctions

Based on CuInSe2 and CuInS2” OAJ Materials and Devices, Vol 5#1, 0508 (2020) – DOI: 10.23647/ca.md20200508.

Henry Mathieu, Cours, ’’Physique des Semiconducteurs et des Composants Électroniques’’, 2001, 5e édition, DUNOD, p.

-137

Bernard Sapoval, Claudine Hermann, ‘’Physique des semi – conducteurs’’ copyright 1990, Ellipses, P.196

Michelle Schatzman, Cours et Exercices, Analyse Numérique, ’’Une Approche Mathématique’’, 2001, 2e édition, DUNOD,

p.211.

R. Scheer, T. Walter, H.W. Schock, M.L. Fearheiley, H.J. Lewerenz,’’CuInS2 based thin film solar cell with 10.2% efficiency’’,

Appl. Phys. Lett. 63 (1993) 3294.

R.A. Mickelsen, W.S. Chen, ’’High photocurrent polycrystalline thin-film CdS/CuInSe2 solar cella ’’, Appl. Phys. Lett. 36

(1980) 371.

P.J. Dale, A.P. Samantilleke, G. Zoppi, I. Forbes, L.M. Peter, ‘’Characterization of CuInSe2 material and devices: comparison

of thermal and electrochemically prepared absorber layers’’, J. Phys. D: Appl. Phys. 41 (2008) 085105.

Alain Ricaud, ‘’Photopiles Solaires’’, De la physique de la conversion photovoltaïque aux filières, matériaux et procédés.

, 1e édition, Presses polytechniques et universitaires romandes, p.40.

Subba Ramaiah Kodigala, “Cu(In1-xGax)Se2 based thin solar cells”, 2010, Volume 35, Academic Press, ELSEVIER. Inc.

E. M. Keita, B. Mbow, C. Sene, ‘' Perovskites and other framework structure crystalline materials”, chap No 22: Framework

structure materials in photovoltaics based on perovskites 3D”, OAJ Materials and Devices, vol 5 (2), (Coll. Acad. 2021), p.

-708. DOI: 10.23647/ca.md20201511

Downloads

Published

2023-05-12

How to Cite

Keita, E. H. M., Mbaye, F., Dia, M., Sow, C., Sene, C., & Mbow, B. (2023). Real Solar Cell and Determination Methods of Electrical Parameters. OAJ Materials and Devices, 7. Retrieved from http://caip.co-ac.com/index.php/materialsanddevices/article/view/149

Issue

Vol. 7 (2023): OAJ Materials and Devices, Vol.7 (2023)

Section

Articles

License

Copyright (c) 2023 El Hadji Mamadou Keita, F. Mbaye, M. Dia, C. Sow, C. Sene, B. Mbow

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Authors who publish with this journal agree to the following terms:

    1. Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License ( Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License) that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
    2. To the extent transferable, copyright in and to the undersigned article is hereby assigned to Collaborating Academics and Open Access Journal Materials and Devices (ISSN: 2495-3911) for publication in the website of the journal and as part of a book (eventually a special volume) that could be produced in a printed and/or an electronic form.
    3. Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
    4. Figures, tables, and other information present in articles published in the OAJ Materials and Devices may be reused without permission, provided the citation of original article is made in figure's or table's caption.