Simulation and optimization of the nSiC layer’s thickness in a nSiC/pSi photovoltaic cell


  • Moyeme Daniel Kabe Solar Energy Laboratory, University of Lomé, Togo
  • Yendoube Lare University of Lomé
  • Laurent Ottaviani Aix-Marseille University
  • Marcel Pasquinelli Aix-Marseille University
  • Damien Barakel Aix-Marseille University
  • Marc Portail CRHEA


SiC, heterostructure, solar cell


Simulations of the emitter layer in 3C-SiC heterostructure solar cells were performed by means of SCAPS to model the optimal thickness and predict the influence on cell’s behaviour. Then, the cells have been elaborated by chemical vapor deposition and characterized. The opto-electrical measurements showed an improvement of the absorption of photons in the short wavelengths thanks to the thin layer of the emitter, and the non-degradation in bulk of the base cell. On the front side, the using of Ti/Au contacts also leads to an improvement in the absorption of photons thanks to the low series resistance.


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How to Cite

Kabe, M. D., Lare, Y., Ottaviani, L., Pasquinelli, M., Barakel, D., & Portail, M. (2019). Simulation and optimization of the nSiC layer’s thickness in a nSiC/pSi photovoltaic cell. OAJ Materials and Devices, 4(1). Retrieved from