Simulation and optimization of the nSiC layer’s thickness in a nSiC/pSi photovoltaic cell

Authors

  • Moyeme Daniel Kabe Solar Energy Laboratory, University of Lomé, Togo
  • Yendoube Lare University of Lomé
  • Laurent Ottaviani Aix-Marseille University
  • Marcel Pasquinelli Aix-Marseille University
  • Damien Barakel Aix-Marseille University
  • Marc Portail CRHEA

Keywords:

SiC, heterostructure, solar cell

Abstract

Simulations of the emitter layer in 3C-SiC heterostructure solar cells were performed by means of SCAPS to model the optimal thickness and predict the influence on cell’s behaviour. Then, the cells have been elaborated by chemical vapor deposition and characterized. The opto-electrical measurements showed an improvement of the absorption of photons in the short wavelengths thanks to the thin layer of the emitter, and the non-degradation in bulk of the base cell. On the front side, the using of Ti/Au contacts also leads to an improvement in the absorption of photons thanks to the low series resistance.

References

Kefif K, Bouizem Y, Belfedal A, Sib JD, Benlakehal D, Chahed L. Hydrogen related crystallization in silicon carbide thin films. Optik. 2018;154:459–466.

Sprouster DJ, Koyanagi T, Dooryhee E, Ghose SK, Katoh Y, Ecker LE. Reprint of: Microstructural evolution of neutron irradiated 3C-SiC. Scr Mater. 15 janv 2018;143:176â€80.

Chung GS, Kim KS, Yakuphanoglu F. Electrical characterization of Au/3C-SiC/n-Si/Al Schottky junction. J Alloys Compd. oct 2010;507(2):508â€12.

Tanner P, Dimitrijev S, Harrison HB. Current mechanisms in n-SiC/p-Si heterojunctions. In: 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. IEEE; 2008. p. 41–43.

Heidarzadeh H, Baghban H, Rasooli H, Dolatyari M, Rostami A. A new proposal for Si tandem solar cell: Significant efficiency enhancement in 3C–SiC/Si. Optik. 1 févr 2014;125(3):1292â€6.

Richards BS, Brown AS, Trupke T, Corkish RP, Green MA. β-SiC–based Photovoltaic and Optical Devices. In: Proceedings of ANZSES Conference. 2002.

Burgelman M, Verschraegen J, Degrave S, Nollet P. Modeling thin-film PV devices. Prog Photovolt Res Appl. 2004;12(2â€3):143–153.

Toure M, Berenguier B, Ottaviani L, Pasquinelli M, Palais O, Di Lauro P, et al. New 3C Silicon Carbide on Silicon Hetero-Junction Solar Cells for UV Collection enhancement. MRS Online Proc Libr Arch. 2014;1693.

Zielinski M, Portail M, Chassagne T, Juillaguet S, Peyre H. Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor. J Cryst Growth. 2008;310(13):3174–3182.

Portail M, Zielinski M, Chassagne T, Chauveau H, Roy S, De Mierry P. Highly sensitive determination of N+ doping level in 3C–SiC and GaN epilayers by Fourier transform infrared spectroscopy. Mater Sci Eng B. 2009;165(1â€2):42–46.

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Published

2019-06-06

How to Cite

Kabe, M. D., Lare, Y., Ottaviani, L., Pasquinelli, M., Barakel, D., & Portail, M. (2019). Simulation and optimization of the nSiC layer’s thickness in a nSiC/pSi photovoltaic cell. OAJ Materials and Devices, 4(1). Retrieved from http://caip.co-ac.com/index.php/materialsanddevices/article/view/79

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