Optical and Electrophysical Properties of the Germanium Oxynitride-Semiconductor Structure

Authors

  • Irakli Nakhutsrishvili Institute of Cybernetics of Georgian Technical University
  • Zurab Adamia

Keywords:

SEMICONDUCTORS, GERMANIUM OXYNITRIDE, OPTICAL PROPERTIES, ELECTROPHYSICAL PROPERTIES

Abstract

The paper studies the optical and electrophysical characteristics of dielectric films of germanium oxynitride obtained by nitridation of single-crystalline germanium with humid ammonia and deposition of reaction products on semiconductor substrates. These films create a high-quality interface with silicon and indium phosphide.

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Published

2025-05-29

How to Cite

Nakhutsrishvili, I., & Adamia , Z. (2025). Optical and Electrophysical Properties of the Germanium Oxynitride-Semiconductor Structure. OAJ Materials and Devices, 9. Retrieved from https://caip.co-ac.com/index.php/materialsanddevices/article/view/191

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Vol. 9 (2025): OAJ Materials and Devices vol 9 (2025)

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Copyright (c) 2025 Irakli Nakhutsrishvili, Zurab Adamia

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